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DATA SHEET
ZENER DIODES
RD2.0F to RD82F
ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE
DESCRIPTION
NEC type RDF Series are DHD (Double Heatsink Diode) Construction planar type zener diodes possessing an allowable power dissipation of 1 watt.
PACKAGE DIMENSIONS (Unit: mm)
0.8
FEATURES
* DHD (Double Heatsink Diode) Construction * Planar process * VZ: Applied E24 standard * DO-41 Glass sealed package
3.0 MAX.
Circuits for, Constant Voltage, Constant Current, Wave form clipper, Surge absorber, etc.
MAXIMUM RATINGS (TA = 25C)
Power Dissipation (P) Forward Current (IF) Junction Temperature (Tj) Storage Temperature (Tstg) Peak Reverse Power (PRSM) 1 W (See Fig. 1) 200 mA 175C -65 to +175C See Fig. 9
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13936EJ3V0DS00 (3rd edition) (Previous No. SC-1007A) Date Published June 2000 N CP(K) Printed in Japan
25 MIN.
APPLICATIONS
5 MAX.
Cathode indication
25 MIN.
(c)
1982
RD2.0F to RD82F
ELECTRICAL CHARACTERISTICS (TA = 25 2C)
Type Number Suffix RD2.0F RD2.2F RD2.4F RD2.7F RD3.0F RD3.3F RD3.6F RD3.9F B B B B B B B B B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 MIN. 1.88 2.01 2.11 2.21 2.31 2.41 2.52 2.68 2.83 2.97 3.13 3.27 3.43 3.58 3.73 3.88 4.03 4.15 4.28 4.41 4.53 4.66 4.79 4.95 5.10 5.28 5.46 5.65 5.76 5.98 6.17 6.35 6.55 6.74 6.93 7.17 7.39 7.58 7.87 8.12 8.34 8.64 8.91 9.16 9.50 9.83 10.22 10.54 10.87 11.19 11.50 11.80 Zener Voltage Note 1 VZ (V) MAX. 2.12 2.25 2.34 2.45 2.55 2.65 2.78 2.93 3.07 3.22 3.37 3.51 3.68 3.83 4.00 4.15 4.28 4.41 4.55 4.65 4.78 4.91 5.05 5.22 5.38 5.56 5.75 5.95 6.14 6.33 6.52 6.71 6.90 7.10 7.33 7.55 7.80 8.03 8.28 8.54 8.80 9.08 9.38 9.67 9.99 10.40 10.75 11.09 11.43 11.77 12.09 12.41 IZ (mA) 40 40 40 40 40 40 40 40 Dynamic Impedance Note 2 ZZ () MAX. 25 20 15 15 15 15 15 15 IZ (mA) 40 40 40 40 40 40 40 40 Reverse Current IR (A) MAX. 200 200 200 150 100 80 60 40 VR (V) 0.5 0.7 1.0 1.0 1.0 1.0 1.0 1.0
RD4.3F
B
40
15
40
20
1.0
RD4.7F
B
40
10
40
20
1.0
RD5.1F
B
40
8
40
20
1.0
RD5.6F
B
40
8
40
20
1.5
RD6.2F
B
40
6
40
20
3.0
RD6.8F
B
40
6
40
20
3.5
RD7.5F
B
40
4
40
20
4.0
RD8.2F
B
40
4
40
20
5.0
RD9.1F
B
40
6
40
20
6.0
RD10F
B
40
6
40
10
7.0
RD11F
B
20
8
20
10
8.0
RD12F
B
20
8
20
10
8.0
2
Data Sheet D13936EJ3V0DS00
RD2.0F to RD82F
Type Number Suffix RD13F B B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B1 B2 B3 B B B B B B B B MIN. 12.19 12.63 13.11 13.55 14.05 14.52 14.98 15.44 15.89 16.37 17.03 17.64 18.26 18.93 19.59 20.45 21.10 21.75 22.44 23.17 23.90 24.63 25.70 26.72 27.43 28.64 29.57 30.35 31.49 32.39 33.24 34.26 35.19 36.11 37.14 38.13 40 44 48 53 58 64 70 77
Zener Voltage Note 1 VZ (V) MAX. 12.85 13.30 13.83 14.28 14.77 15.26 15.75 16.23 16.71 17.27 17.91 18.55 19.21 19.91 20.84 21.51 22.18 22.86 23.59 24.36 25.14 26.10 27.12 28.43 29.09 30.10 31.26 31.97 33.06 34.15 34.94 36.01 37.01 38.00 39.04 40.80 45 49 54 60 66 72 79 87 IZ (mA) 20
Dynamic Impedance Note 2 ZZ () MAX. 10 IZ (mA) 20
Reverse Current IR (A) MAX. 10 VR (V) 10
RD15F
B
20
10
20
10
11
RD16F
B
20
12
20
10
12
RD18F
B
20
12
20
10
13
RD20F
B
20
14
20
10
15
RD22F
B
10
14
10
10
17
RD24F
B
10
16
10
10
19
RD27F
B
10
16
10
10
21
RD30F
B
10
18
10
10
23
RD33F
B
10
18
10
10
25
RD36F
B
10
20
10
10
27
RD39F RD43F RD47F RD51F RD56F RD62F RD68F RD75F RD82F
B
10 10 10 10 10 10 10 10 10
20 50 50 50 50 50 70 90 90
10 10 10 10 10 10 10 10 10
10 5 5 5 5 5 5 5 5
30 33 36 39 43 47 52 57 63
Note 1. 2.
Tested with pulse (40 ms). ZZ is measured at IZ given an very small A.C. Current Signal.
Data Sheet D13936EJ3V0DS00
3
RD2.0F to RD82F
TYPICAL CHARACTERISTICS (TA = 25C)
Fig. 1 P-TA RATING
1.2 1.0 Power Dissipation P (W) 0.8 0.6 0.4 0.2 = 20 mm 10 mm 5 mm
Fig. 2 IZ-VZ CHARACTERISTIC
TA = 25C Zener Voltage VZ (V) TYP. 15 10 5 RD15F RD12F RD10F RD8.2F RD7.5F RD6.8F RD6.2F RD5.1F RD4.7F RD3.9F RD3.3F RD2.7F RD2.0F
IF (mA)
600 400 200 0 0.5 1.0 VZ (V) 40 80 120 160 200 240
0
20
40 60
80 100 120 140 160 180 200
Ambient Temperature TA (C)
Fig. 3 IZ-VZ CHARACTERISTIC
TA = 25C TYP. Zener Voltage VZ (V) 40 35 30 25 20 15 1000 800 600 400 200
Fig. 4 IZ-VZ CHARACTERISTIC
TA = 25C Zener Voltage VZ (V) TYP. 100 90 80 70 60 50 40
IF (mA)
0 0.5 1.0 VF (V) RD39F RD36F 20 RD33F RD30F 40 RD27F RD24F RD22F 60 RD20F RD18F RD15F PMAX. 80
Zener Current IZ (mA)
RD82F RD75F RD68F RD62F RD56F RD51F RD47F RD43F
0 0.5 2 VF (V) 4 6 8 10 12 14 16 18 20 22 PMAX.
IF (mA)
600 400 200
Fig. 5 Z-VZ CHARACTERISTIC
VZ - Temperature Coefficiency Z (%/C) VZ - Temperature Coefficiency Z (%/C) 0.1 0.08 0.06 0.04 0.02 0 -0.02 -0.04 -0.06 -0.08 0 4 8 12 16 20 24 28 32 36 40 44 Zener Voltage VZ (V) %/C mV/C 40 32 24 16 8 0 -8 -16 -24 -32 -40 VZ - Temperature Coefficiency Z (mV/C)
Fig. 6 Z-VZ CHARACTERISTIC
VZ - Temperature Coefficiency Z (mV/C)
0.1 %/C
Zener Current IZ (mA)
Zener Current IZ (mA)
120 100 80 60 40
0.09
0.08
mV/C
0.07
0.06 40 50 60 70 80 90
Zener Voltage VZ (V)
4
Data Sheet D13936EJ3V0DS00
RD2.0F to RD82F
Fig. 7 ZZ-IZ CHARACTERISTIC
1 000 Dynamic Inpedance ZZ () TA = 25C TYP.
240
Fig. 8 Rth-S CHARACTERISTIC
Thermal Resistance Rth (C/W)
RD6.8F RD2.0F RD39F RD82F
Junction to ambient
200 160 120 80 40 = 5 mm 10 mm S (Thickness = 0.035 mm)
100
RD
10
6.2
RD
F
RD7.
5F RD5. 6
4.3
F
1
RD10F RD15F
FR D20F RD15 F
RD
5.1
F
20 mm
0.1
RD6.8F RD6.2F RD7.5F RD10F 1 10 Zener Current IZ (mA) 100
0
20
40
60
80
2
100
Size of PC Board S (mm )
Fig. 9 PRSM RATING
10 000 PRSM TA = 25C NonRepetitive
Fig. 11 POWER DISSIPATION NOMOGRAM
Peak Reverse Power PRSM (W)
t 1 000
Heat -Sink
Heat -Sink
100
(incn)
10
(mm) 30 25 20 1.5
1.0
1 10 100
1m Time t (s)
10 m
100 m
1
5/8
15 10
3/8
Fig. 10 Zth CHARACTERISTIC
2/8
Transient Thermal Impedance Zth (C/W) 1 000 150C/W 100
9 8 7 6 5 4
25 35 45 55 65 75 85 95 105 115 125
1.0 0.9 0.8 0.7 0.6
10
3 Lead Length (mm)
1/8
0.5 135 0.4 145 Power Dissipation Heat-Sink P (W) Temperature TH (C)
1
0.1 1m
10 m
100 m 1 Time t (s)
10
100
Data Sheet D13936EJ3V0DS00
5
RD2.0F to RD82F
[MEMO]
6
Data Sheet D13936EJ3V0DS00
RD2.0F to RD82F
[MEMO]
Data Sheet D13936EJ3V0DS00
7
RD2.0F to RD82F
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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